We are analyzing https://link.springer.com/article/10.1007/s10854-024-13332-7.

Title:
Suppressing degradation of ITO electrode for electroluminescence device by transparent MoO3 barrier layer | Journal of Materials Science: Materials in Electronics
Description:
The degradation of Indium tin oxide (ITO), a widely used electrode in optoelectronic devices, reduces the reliability of devices and even results in the irreversible failure of devices. Herein, irreversible failure of Er-doped npn light-emitting devices is observed below the breakdown field strength, which originates from the migration of metal ions from the ITO electrode under high electric fields. By inserting a MoO3 barrier into Er-doped npn devices, the migration of metal ions from the ITO electrode is effectively suppressed to prevent contamination of the luminescent layer, thereby improving the operational stability and doubling the optical power density. The blocking effect of the MoO3 layer on the electromigration of metal ions comes from the elimination of grain boundaries as fast diffusion paths, as well as the spontaneous interface reaction between the MoO3 layer and ITO electrode to form an interface with residual positive charges, which generates Coulombic repulsion on metal ions.
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Topics {✒️}

light-emitting diodes based metal/metal-oxide interfaces er-doped npn devices enhancing er3+-related electroluminescence carrier-transport layers oxide-oxide heterojunction interfaces sn-doped in2o2 grown month download article/chapter inorganic barrier layer zno/p-si heterojunction record-beating electroluminescence efficiencies avoiding voltage-induced degradation indium tin oxide organic leds hole-inject layer optical power density related subjects low-temperature process cdte/ito interface stability cigs solar cells advanced semiconductor materials electronic surface properties ito thin films colloidal quantum dots ito/pet films realizing efficient blue key research project privacy choices/manage cookies full article pdf carrier recombination suppression emerging electrochromic materials metal contacts affect minority carrier diffusion oxygen flow influence cation oxidation state accepted manuscript version high electric fields high electric field writing—review & editing semiconductor materials holds exclusive rights 1007/s10854-024-13332-7 access european economic area breakdown field strength residual positive charges generates coulombic repulsion improved photovoltaic performance polyfullerene guest acceptor contaminative environments studied micro-raman characterization

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         description:The degradation of Indium tin oxide (ITO), a widely used electrode in optoelectronic devices, reduces the reliability of devices and even results in the irreversible failure of devices. Herein, irreversible failure of Er-doped npn light-emitting devices is observed below the breakdown field strength, which originates from the migration of metal ions from the ITO electrode under high electric fields. By inserting a MoO3 barrier into Er-doped npn devices, the migration of metal ions from the ITO electrode is effectively suppressed to prevent contamination of the luminescent layer, thereby improving the operational stability and doubling the optical power density. The blocking effect of the MoO3 layer on the electromigration of metal ions comes from the elimination of grain boundaries as fast diffusion paths, as well as the spontaneous interface reaction between the MoO3 layer and ITO electrode to form an interface with residual positive charges, which generates Coulombic repulsion on metal ions.
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      headline:Suppressing degradation of ITO electrode for electroluminescence device by transparent MoO3 barrier layer
      description:The degradation of Indium tin oxide (ITO), a widely used electrode in optoelectronic devices, reduces the reliability of devices and even results in the irreversible failure of devices. Herein, irreversible failure of Er-doped npn light-emitting devices is observed below the breakdown field strength, which originates from the migration of metal ions from the ITO electrode under high electric fields. By inserting a MoO3 barrier into Er-doped npn devices, the migration of metal ions from the ITO electrode is effectively suppressed to prevent contamination of the luminescent layer, thereby improving the operational stability and doubling the optical power density. The blocking effect of the MoO3 layer on the electromigration of metal ions comes from the elimination of grain boundaries as fast diffusion paths, as well as the spontaneous interface reaction between the MoO3 layer and ITO electrode to form an interface with residual positive charges, which generates Coulombic repulsion on metal ions.
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